Appl Phys Lett 2010, 97:012106.CrossRef 48. Rosezin R, Meier M, Breuer U, Kugeler C, Waser R: Electroforming and resistance switching characteristics of silver-doped MSQ with inert electrodes. IEEE Trans. Nanotechnol. 2011, 10:338.CrossRef 49. Liu Q, Sun J, Lv H, Long S, Yin K, Wan N, Li Y, Sun L, Liu M: Real-time observation on dynamic growth/dissolution of conductive

filaments in oxide-electrolyte-based ReRAM. Adv Mater 1844, 2012:24. 50. Yang Y, Gao P, Gaba S, Chang T, Pan X, Lu W: Observation of conducting filament growth in nanoscale resistive Selleckchem FHPI memories. Nat Commun 2012, 3:1737. Competing interests The authors declare that they have no competing interests. Authors’ contributions AP fabricated and measured the devices under the instruction of SM (Siddheswar Maikap). SZR also helped to fabricate MIM device and measurement under the instruction of SM (Siddheswar Maikap). SM (Sandip Majumdar) and SM (Santanu Manna) fabricated Ge NWs and measured PL spectra under the instruction of SKR. All the authors contributed to the revision of the manuscript, and they approved it for publication. All authors read and approved the final manuscript.”
“Background In recent years,

resonant tunneling diode (RTD) has attracted growing interest on the applications of highly sensitive strain gauge. Wen et al. explained Go6983 ic50 this phenomenon as the meso-piezoresistance effect, which is the resonant tunneling current of the RTD tuned by the external mechanical strain [1]. Our previous study has already proved that the strain gauge sensitivity of the GaAs-based RTD can be one to two orders of magnitude higher than the traditional Si-based piezoresistive sensing elements [2–4]. Combining with the microelectromechanical

system (MEMS) ABT-737 in vitro fabrication process on GaAs substrate, RTD has been fabricated as the embedded mechanical sensing element for different MEMS sensors: accelerometers 3-oxoacyl-(acyl-carrier-protein) reductase [5] and hydrophone [6]. Compared to Si, GaAs is quite fragile, a property which limited its applications in the field of MEMS sensors especially as mechanical structures. Meanwhile, GaAs is quite expensive in terms of the material and fabrication process. To further expand the application fields of the excellent performances of GaAs-based mechanical sensing element, it is quite necessary to combine the highly sensitive GaAs-based strain gauge elements with the Si substrate. Due to lattice mismatch, GaAs is quite difficult to be fabricated on Si substrate [7]. Researchers have already worked for many years to combine the advantage of Si-based materials with other semiconductor materials for application in microelectronics and photonics, and different technologies have been reported: direct GaAs-on-Si epitaxy, GaAs-on-Si growth through Ge buffer layers, GaAs-on-SOI epitaxy, GaAs-on-STO-Si epitaxy, bonding, etc. [8–10].