Phys Rev B 1989, 39:1120 CrossRef 45 Gao KH, Zhou WZ, Zhou YM, Y

Phys Rev B 1989, 39:1120.CrossRef 45. Gao KH, Zhou WZ, Zhou YM, Yu G, Lin T, Guo SL, Chu JH, Dai N, Gu Y, Zhang YG, Austing DG: Magnetoresistance in high-density two-dimensional electron gas confined in InAlAs/InGaAs quantum well. Appl Phys Lett 2009, 94:152107.CrossRef 46. Hang DR, Liang C-T, Juang JR, Huang T-Y, Hung WK, Chen YF, Kim G-H, Lee J-H, Lee J-H: Electrically detected and microwave-modulated Shubnikov-de Haas oscillations in an Al 0.4 Ga 0.6 N/GaN heterostructure. J Appl Phys 2003, 93:2055.CrossRef 47. Juang JR, Huang T-Y, Chen T-M, Lin selleck chemical M-G, Lee Y, Liang

C-T, Hang DR, Chen YF, Chyi J-I: Transport in a gated Al 0.18 Ga 0.82 N/GaN electron system. J Appl Phys 2003, 94:3181.CrossRef 48. Chen JH, Lin JY, Tsai JK, Park H, Kim G-H, Youn D, Cho HI, Lee EJ, Lee JH, Liang C-T, Chen YF: Experimental evidence for Drude-Boltzmann-like transport in a two-dimensional electron gas in an AlGaN/GaN heterostructure. J Korean Phys Soc 2006, 48:1539. 49. Cho KS, Huang T-Y, Huang CP, Chiu YH, Liang C-T, Chen YF, Lo I: Exchange-enhanced click here g-factors in an Al 0.25 Ga 0.75 N/GaN two-dimensional electron system. J Appl Phys 2004, 96:7370.CrossRef 50. Cho KS, Liang C-T, Chen YF, Tang YQ, Shen B: Spin-dependent photocurrent

induced by Rashba-type spin splitting in Al 0.25 Ga 0.75 N/GaN heterostructures. Phys Rev B 2007, 75:085327.CrossRef 51. Lin S-K, Wu KT, Huang CP, Liang C-T, Chang YH, Chen YF, Chang PH, Chen NC, Chang C-A, Peng HC, Shih CF, Liu KS, Lin TY: Electron transport in In-rich In x Ga 1-x N films. J Appl Phys 2005, 97:046101.CrossRef Competing interests The authors declare that they have no competing interests. Authors’ contributions STL and YTW performed the experiments. GS and SDL prepared the devices. YFC and CTL coordinated the project. STL, JPB, and CTL drafted the paper. All the authors read and approved the final version of the manuscript.”
“Background Researches regarding polymer-metal and polymer-inorganic multicomponent hybrid composites such as polyaniline/silver (PANI/Ag), poly(ethylene oxide)/aurum (PEO/Au), PANI/Fe3O4, etc.

have attracted much attention during the last two decades due to their large potential applications in the fields of electromagnetic interference (EMI) shielding [1–3], ifoxetine energy storage devices [4–6], catalysis [7–9], and sensors [10–14]. These hybrid composites show better chemical and physical properties than bulk materials. Among various polymers, PANI as a versatile conducting polymer is usually selected to compound with noble metals or inorganic particles owing to its easy GSK872 chemical structure preparation, anticorrosion, and the low cost of raw material. Recently, Kamchi et al. [3] have elaborated serials of camphor-doped PANI/FeNi nanoparticle-based EMI shielding composites. The maximum conductivity value of 104 S m-1 and the shielding effectiveness (SE) of 90 dB of the prepared multilayer composites have been detected over the frequency band of 8 to 18 GHz.

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