The interface roughness of the films deposited using BT-045J was approximately 70 nm, compared with a roughness of less than 50 nm for the films deposited using BT-03B. These results indicate that larger Ulixertinib supplier particles with greater kinetic energy roughen the platinum thin films on the silicon substrates much more severely during impact with the substrates. Thus, interface between the films deposited by BT-045J selleckchem was rougher than that obtained using BT-03B starting powder. Figure 3 FIB cross-section images
of 0.2-μm-thick BaTiO 3 thin films on platinum-coated substrates fabricated. (a) BT-045J with a particle size of 0.45 μm and (b) BT-03B with a particle size of 0.30 μm. Effect of rapid thermal annealing on surface morphology and crystal growth Based on the above-mentioned statement, the macroscopic
defects and rough interface effect could be ameliorated by means of BT-03B starting powder to reduce the leakage current. However, it was difficult to form dense films using small particles with weak particle-to-particle bonding as the starting powder . Therefore, we apply RTA treatment selleck kinase inhibitor in this study and investigate the effects of RTA processing on the surface morphology of AD-deposited BaTiO3 thin films. Figure 4 shows 10 × 10 μm2 AFM images of 2-D views, 3-D views, and selected area surface profiles of the as-deposited films fabricated by BT-03B starting powder (a) and the post-annealed films processed at different temperatures: 550°C (b), 650°C (c), and 750°C (d). Comparing Figure 4a,b,c, which presents 3-D views of the film surface morphology, it can be noted that the surface becomes smoother and Phosphoribosylglycinamide formyltransferase the RMS value decreases as the RTA temperature increases from room temperature to 650°C. In contrast, Figure 4d reveals that the RMS value increased and agglomerates were present on the surface. Moreover, the line profiles of the selected area are shown in Figure 4 (a-2) to (d-2), which indicated the change in both the diameter and depth of the craters on the surface, which follow
the trend in Figure 4a,b,c,d. Figure 4 (a-2) shows the craters on the as-deposited films, which have a diameter of 1.2 μm and a depth of 58.5 nm, and the smaller craters observed after RTA treatment at 650°C, which have a diameter of 0.7 μm and a depth of 27.5 nm. However, as shown in Figure 4 (d-2), at 750°C, larger craters with a diameter of 1.3 μm and a depth of 60.2 nm appeared on the surface of the thin film. It was implied that the low surface roughness achieved at 650°C may be due to the microstructure on the surface. Figure 4 AFM surface morphology of the as-deposited BaTiO 3 thin film. (a) 2D view, (a-1) 3D view, and (a-2) line profile of the selected area in the AFM images with a scan area of 10 × 10 μm2. AFM images of BaTiO3 thin films annealed for 60 s at different temperatures: 550°C (b), 650°C (c), and 750°C (d).