Figure 6 Growth rate-induced improvements in the PL spectra for the three CL materials. FWHM and the integrated intensity ratios www.selleckchem.com/products/ly2109761.html between 2- and 1-ML s−1 grown samples for GaAsSb, GaAsN, and GaAsSbN CLs. Extending the emission wavelength Our goal is to extend the emission wavelength through the best growth conditions found from the different approaches analyzed above. Since the most significant improvement was found when the growth rate of the
CL is increased, the efforts will first focus on trying to extend the emission by adding higher amounts of Sb and N in the CL grown at 2 ML s−1. The reference values will be used for the other parameters. Three samples with the CL layer grown at 2 ML s−1 were studied: the first one with the reference parameters for N and Sb sources (sample F1), the second one by raising the Sb effusion cell temperature to 345°C (sample F2), and the last one by increasing both the Sb cell temperature to 345°C and the RF plasma source power to 210 W (sample F3). The PL spectra from this series of samples are shown in Figure 7a. It can be observed that LY3023414 research buy increasing the Sb BI 2536 solubility dmso content in the CL leads to a red-shifted emission peak with a simultaneously weakened luminescence. However, it was impossible to incorporate
a higher N content at this growth rate, finding a similar spectrum for sample F3 as that of sample F2, with no significant peak shift. This means that the additional active N provided is not being incorporated substitutionally into MYO10 the lattice. Figure 7 PL spectra at 15 K for samples with different Sb and N contents. PL spectra when increasing the flux of Sb and N during the growth of the CL at (a) 2.0 ML s−1 and (b) 1.5 ML s−1. A similar study was carried out also for a lower growth rate of 1.5 ML s−1. The three samples described in the previous paragraph, with the same parameters for the Sb and N sources, were reproduced with a CL growth rate of 1.5 ML s−1 (G1, G2 and G3, respectively). The PL spectra are shown in Figure 7b. The PL peak redshift in sample G2 is now 97 meV, as compared to 40 meV at 2 ML s−1.
This means that a higher amount of Sb is now incorporated for the same Sb flux than at 2 ML s−1. Moreover, adding higher N contents is still possible at this lower growth rate, resulting in a long wavelength peak close to 1.4 μm at 15 K (sample G3). This result shows that a strict limitation exists related to N incorporation in the GaAsSbN CL at high growth rates. N contents above approximately 1.6% cannot be incorporated into the lattice when growing at 2 ML s−1. This forces us to limit ourselves to lower growth rates in order to achieve long emission wavelengths. Results at RT Figure 8 shows the RT PL spectra for all the samples from this paper emitting near 1.3 μm. As it can be observed, RT emission was obtained through different approaches.